آی سی TC58NVG1S3HTA00 / آی سی NAND Flash

آی سی TC58NVG1S3HTA00 / آی سی NAND Flash  يک حافظه 2 گيگا بيتي با ساختار 256M x 8 BIT نوع CMOS NAND E2PROM و زمان دسترسي 25 ميکرو ثانيه و تغذيه 3.3 ولتي مي باشد.  این آی سی اورجینال و محصول شرکت TOSHIBA می باشد.

مشخصات آی سی TC58NVG1S3HTA00 :

نوع تغذيه : تغذيه تکي

ولتاژ تغذيه ديجيتال(+) (ولت) : 3.3

حداقل ولتاژ تغذيه تکي (ولت) : 3.135

حداکثر ولتاژ تغذيه تکي (ولت) : 3.63

مشخصات حافظه مقدار حافظه SRAM ( کيلو بايت ) : 2000000

زمان دسترسي (ns) : 25000

نوع ارتباط : ( Paralell) موازي

مشخصات فنی آی سی TC58NVG1S3HTA00 :

MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
2 GBIT (256M × 8 BIT) CMOS NAND E2PROM

TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 GBIT (256M * 8 BIT) CMOS NAND E2 PROM DESCRIPTION The TC58NVG1S3HTA00 is a single.  3.3V 2 Gbit (2,281,701,376 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 128) bytes * 64 pages ´ 2048blocks. The device has two 2176-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2176-byte increments.

The Erase operation is implemented in a single block unit (128 Kbytes + 8 Kbytes: 2176 bytes ´ 64 pages). TC58NVG1S3HTA00 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.